IRFP3206 200A 60V N-Channel MOSFET
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| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 280 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 5.31mm |
| Transistor Material | Si |
| Length | 15.87mm |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Series | HEXFET |
| Minimum Operating Temperature | -55 °C |
| Height | 20.7mm |
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