60R580P 8A 600V N-Channel Mosfet.

• Type Designator: MMIS60R580P
• Marking Code: 60R580P
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 70 W
• Maximum Drain-Source Voltage |Vds|: 600 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Drain Current |Id|: 8 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 34 nS
• Drain-Source Capacitance (Cd): 428 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm